Full chip optical imaging of logic state evolution in CMOS circuits
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Measuring the logic state switching of individual devices in present and future sub-micron scale CMOS circuits poses substantial challenges. Here we show that hot electron light emission is generated as a subnanosecond pulse coincident with the normal switching of each individual FET in a CMOS circuit. This emission can be used to directly measure the propagation of signals through the individual gates in fully-functional CMOS circuits.
[1] T. Hasegawa,et al. The Sematech failure analysis roadmap , 1995 .
[2] Yukiharu Uraoka,et al. Hot carrier evaluation of MOSFETs in ULSI circuits using the photon emission method , 1993 .
[3] Jeff F. Young,et al. Two‐dimensional time‐resolved imaging with 100‐ps resolution using a resistive anode photomultiplier tube , 1992 .