Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments
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Jong-Ho Lee | Seung Wook Ryu | Cheol Seong Hwang | Kyung Jean Yoon | Hyung Dong Lee | Jung Ho Yoon | Jun Yeong Seok | Tae Joo Park | Gun Hwan Kim | C. Hwang | Jong-Ho Lee | K. Kim | Min Hwan Lee | G. Kim | Seul Ji Song | J. Yoon | H. Lee | K. J. Yoon | T. Park | Kyung Min Kim | S. Ryu
[1] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[2] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[3] C. Hwang,et al. Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants , 2009 .
[4] Jun Yeong Seok,et al. Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory , 2011 .
[5] Byung Joon Choi,et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .
[6] D. Jeong,et al. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook , 2011, Nanotechnology.
[7] C. N. Lau,et al. The mechanism of electroforming of metal oxide memristive switches , 2009, Nanotechnology.
[8] Byung Joon Choi,et al. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .
[9] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[10] C. Hwang,et al. The conical shape filament growth model in unipolar resistance switching of TiO2 thin film , 2009 .