High field transport in GaN/AlGaN heterostructures

Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are comparable to those expected from previously published simulations based upon Monte Carlo techniques. Several possible mechanisms for the low value of the velocity previously found are discussed, including nonequilibrium phonons and local inhomogeneities in the field.

[1]  A. Allerman,et al.  Effects of surface treatment on the velocity–field characteristics of AlGaN/GaN heterostructures , 2004 .

[2]  Lester F. Eastman,et al.  Electron drift velocity in AlGaN/GaN channel at high electric fields , 2003 .

[3]  G. Simin,et al.  High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz , 2003 .

[4]  Lester F. Eastman,et al.  Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis , 2003 .

[5]  M. Manfra,et al.  Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2 W/mm at 25 GHz grown by plasma-assisted MBE , 2003 .

[6]  L. Rota,et al.  Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel , 2003 .

[7]  D. Vasileska,et al.  The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures , 2002 .

[8]  Stephen M. Goodnick,et al.  Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures , 2002 .

[9]  L. Shifren,et al.  The Effective Potential in Device Modeling: The Good, the Bad and the Ugly , 2002 .

[10]  V. Kachorovskii,et al.  Electron-density stratification in two-dimensional structures tuned by an electric field , 2002, cond-mat/0204379.

[11]  Lester F. Eastman,et al.  An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer , 2002 .

[12]  T. Thornton,et al.  High-field transport studies of gan , 2002 .

[13]  J. Smart,et al.  LETTER TO THE EDITOR: Hot-electron energy relaxation time in AlGaN/GaN , 2002 .

[14]  K. Brennan,et al.  Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures , 2002 .

[15]  Daniel S. Green,et al.  Gallium nitride based transistors , 2001 .

[16]  L. Shifren,et al.  Electron-density-dependent variation of the relative strength of the dual polar optical modes in Al x Ga 1-x As as detected by Raman scattering , 2000 .

[17]  Giovanni Ghione,et al.  Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN , 2000 .

[18]  D. Ferry.  Effective potentials and the onset of quantization in ultrasmall MOSFETs , 2000 .

[19]  A. Gossard,et al.  Dislocation scattering in a two-dimensional electron gas , 2000, cond-mat/0003199.

[20]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[21]  Michael S. Shur,et al.  Electron mobility in modulation-doped AlGaN-GaN heterostructures , 1999 .

[22]  Lester F. Eastman,et al.  Scattering of electrons at threading dislocations in GaN , 1998 .

[23]  D. Ferry,et al.  Subpicosecond Time‐Resolved Raman Studies of Non‐Equilibrium Excitations in Wide Bandgap GaN , 1997 .

[24]  H. Morkoç,et al.  Direct measurements of electron-longitudinal optical phonon scattering rates in wurtzite GaN , 1997 .

[25]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[26]  Ferry,et al.  Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs. , 1996, Physical review. B, Condensed matter.

[27]  M. Shur,et al.  Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition , 1995 .

[28]  K. Brennan,et al.  Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure , 1995 .

[29]  Ferry,et al.  Hot-phonon effects and interband relaxation processes in photoexcited GaAs quantum wells. , 1989, Physical review. B, Condensed matter.

[30]  P. Lugli,et al.  Monte Carlo algorithm for hot phonons in polar semiconductors , 1987 .

[31]  D. K. Ferry,et al.  Hot electron microwave conductivity of wide bandgap semiconductors , 1976 .

[32]  W. A. Porter,et al.  The effect of contacts on microwave emission from InSb , 1972 .

[33]  E. Müller,et al.  Effect of a magnetic field upon the gunn effect in InSb , 1970 .

[34]  H. Bourne.  Composition of the Interelectrode Prebreakdown Current in High Vacuum , 1955 .

[35]  H. Grubin,et al.  The Gunn-hilsum Effect , 1979 .

[36]  D. Ferry.  Energy-diffusion equation in hot-electron problems: Disturbance of the polar-optical-phonon distribution , 1973 .