A 94 GHz monolithic high output power amplifier

A two-stage monolithic W-band power amplifier using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300 mW with 10.5% peak power-added efficiency at 94 GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

[1]  D.C. Streit,et al.  A 94-GHz monolithic balanced power amplifier using 0.1-μm gate GaAs-based HEMT MMIC production process technology , 1995, IEEE Microwave and Guided Wave Letters.

[2]  T.H. Chen,et al.  A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier , 1992, GaAs IC Symposium Technical Digest 1992.

[3]  M. Biedenbender,et al.  High-yield W-band monolithic HEMT low-noise amplifier and image rejection downconverter chips , 1993, IEEE Microwave and Guided Wave Letters.

[4]  T.H. Chen,et al.  A W-band monolithic 175-mW power amplifier , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[5]  Barry R. Allen,et al.  A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[6]  G. S. Dow,et al.  A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA] , 1993, 15th Annual GaAs IC Symposium.

[7]  P. D. Chow,et al.  Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[8]  R. Lai,et al.  A novel W-band monolithic push-pull power amplifier , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.