Multiple equilibrium points and their significance in the second breakdown of bipolar transistors

Suggests a simple one-dimensional model for the electrical and thermal behavior of a bipolar transistor. The proposed model can be embedded in an external circuit and analyzed by an appropriate circuit analysis program. Existence of multiple equilibrium points for certain biasing conditions is demonstrated and their implication upon the transient behavior of a device is discussed. The triggering mechanism for second breakdown in the case of forward base current, as well as reverse base current, is described in the light of these multiple equilibrium points. Prediction of that part of the safe operating area boundary limited by second breakdown is reported. The results compare favorably with the manufacturer's recommended limit.

[1]  P. L. Hower,et al.  Avalanche injection and second breakdown in transistors , 1970 .

[2]  J. Ebers,et al.  Large-Signal Behavior of Junction Transistors , 1954, Proceedings of the IRE.

[3]  Ibrahim N. Hajj,et al.  A three‐terminal piecewise‐linear modelling approach to dc analysis of transistor circuits , 1974 .

[4]  G Liebmann.  Resistance-network analogues with unequal meshes or subdivided meshes , 1954 .

[5]  D.L. Blackburn,et al.  Thermal characterization of power transistors , 1976, IEEE Transactions on Electron Devices.

[6]  P. L. Hower,et al.  Second breakdown of transistors during inductive turnoff , 1973 .

[7]  R. D. Thornton.  Characteristics and limitations of transistors , 1966 .

[8]  P. L. Hower,et al.  Comparison of one- and two-dimensional models of transistor thermal instability , 1974 .

[10]  W. Shockley,et al.  Secondary breakdown and hot spots in power transistors , 1963 .

[11]  S. Krishna,et al.  Second breakdown: Hot spots or hot cylinders , 1974 .

[12]  P. Leturcq,et al.  A thermal model for high power devices design , 1974 .

[13]  S. Gaur.  Safe operating area for bipolar transistors , 1977, 1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[14]  F. Bergmann,et al.  Some new aspects of thermal instability of the current distribution in power transistors , 1966 .

[15]  D. H. Pontius,et al.  Second breakdown and damage in junction devices , 1973 .

[16]  K. Nuttall,et al.  Investigation into the survival of epitaxial bipolar transistors in current mode second breakdown , 1978 .

[17]  Vladimir Szekely.  Accurate calculation of device heat dynamics: a special feature of the TRANS-TRAN circuit-analysis program , 1973 .

[18]  V. Székely,et al.  Accurate algorithm for temperature calculation of devices in nonlinear-circuit-analysis programs , 1972 .

[19]  L.J. Turgeon,et al.  Two-dimensional nonisothermal carrier flow in a transistor structure under reactive circuit conditions , 1978, 1977 International Electron Devices Meeting.

[20]  D. Berning,et al.  Some effects of base current on transistor switching and reverse-bias second breakdown , 1978, 1978 International Electron Devices Meeting.

[21]  S. Gaur,et al.  Transistor design and thermal stability , 1973 .

[22]  Albert E. Ruehli,et al.  The modified nodal approach to network analysis , 1975 .

[23]  J. Katzenelson.  An algorithm for solving nonlinear resistor networks , 1965 .

[24]  D. H. Navon.  Technique for thermal stabilization of transistors , 1973 .

[25]  D.H. Navon,et al.  Two-dimensional carrier flow in a transistor structure under nonisothermal conditions , 1976, IEEE Transactions on Electron Devices.

[26]  D. Navon,et al.  Thermal instability in power transistor structures , 1969 .

[27]  Surinder Krishna,et al.  Second Breakdown in Power Transistors Due to Avalanche Injection , 1976, IEEE Transactions on Industrial Electronics and Control Instrumentation.

[28]  G Liebmann,et al.  Solution of Partial Differential Equations with a Resistance Network Analogue , 1950 .

[29]  S. Gaur.  Second breakdown in high-voltage switching transistors , 1976 .

[30]  Ibrahim N. Hajj,et al.  Nonlinear circuit theory: Resistive networks , 1971 .

[31]  R. D. Lindsted,et al.  Steady-state junction temperatures of semiconductor chips , 1972 .

[32]  D.H. Navon,et al.  Time-dependent carrier flow in a transistor structure under nonisothermal conditions , 1977, IEEE Transactions on Electron Devices.

[33]  Sherwin Rubin,et al.  Stable hot spots and second breakdown in power transistors , 1976, 1970 IEEE Power Electronics Specialists Conference.

[34]  A computer model for lateral thermal instabilities in power transistors , 1975, 1975 International Electron Devices Meeting.

[35]  H. A. Schafft,et al.  Second breakdown—A comprehensive review , 1967 .

[36]  David J. Roulston,et al.  Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects , 1972 .

[37]  K. Owyang,et al.  A new power transistor structure for improved switching performances , 1978, 1978 International Electron Devices Meeting.

[38]  Ernest S. Kuh,et al.  Solving nonlinear resistive networks using piecewise-linear analysis and simplicial subdivision , 1977 .

[39]  D. O. Pederson,et al.  SLIC-a simulator for linear integrated circuits , 1971 .

[40]  R.W. Dutton,et al.  Bipolar transistor modeling of avalanche generation for computer circuit simulation , 1975, IEEE Transactions on Electron Devices.

[41]  M. Lampert,et al.  Second-breakdown phenomena in avalanching silicon-on-sapphire diodes , 1972 .