Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETs

We present an improved empirical non-linear large-signal model suitable for the study of intermodulation distortion in III–V HEMTs and Si LDMOSFETs. The model allows an accurate prediction of the I–V characteristics and the corresponding higher-order derivatives, which is necessary for a reliable analysis of intermodulation effects. Our model is suitable for the modeling of both low-and high-power devices. It has been designed to allow an improved flexibility and a simple approach to include self-heating, while guaranteeing continuity, direct parameter extraction and a simple optimization procedure. Validation of the model is presented using experimental data for III–V HEMTs and Si LDMOSFETs. The suitability of our model to study non-linearities in these devices is illustrated by employing it to calculate and analyze intermodulation products using the Volterra series method.

[1]  Songcheol Hong,et al.  A spline large-signal FET model based on bias-dependent pulsed I-V measurement , 2002 .

[2]  H. Zirath,et al.  A new empirical nonlinear model for HEMT and MESFET devices , 1992 .

[3]  Y. Tajima,et al.  Design of Broad-Band Power GaAs FET Amplifiers , 1984 .

[4]  Tor A. Fjeldly,et al.  A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices , 2012 .

[5]  T. Fjeldly,et al.  A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices , 2011, IEEE Transactions on Electron Devices.

[6]  R. Kelsall,et al.  Simulation of Electron Transport in InGaAs/AlGaAs HEMTs Using an Electrothermal Monte Carlo Method , 2006, IEEE Transactions on Electron Devices.

[7]  Robert Anholt,et al.  Electrical and thermal characterization of MESFETs, HEMTs, and HBTs , 1994 .

[8]  Herbert Zirath,et al.  Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's , 1995 .

[9]  T. Kacprzak,et al.  Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics , 1985 .

[10]  G.R. Branner,et al.  An Empirical Large-Signal Model for SiC MESFETs With Self-Heating Thermal Model , 2008, IEEE Transactions on Microwave Theory and Techniques.

[11]  W. R. Curtice,et al.  A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers , 1985, 1985 IEEE MTT-S International Microwave Symposium Digest.

[12]  H. Zirath,et al.  An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[13]  J. Wood,et al.  A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors , 2009, IEEE Transactions on Microwave Theory and Techniques.

[14]  Christian Fager,et al.  Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model , 2002 .

[15]  Anthony E. Parker,et al.  Continuous HEMT model for SPICE , 1996 .

[16]  K. Webb,et al.  A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC , 2004, IEEE Transactions on Microwave Theory and Techniques.

[17]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[18]  T. Sadi,et al.  Electrothermal Monte Carlo Simulation of Submicrometer Si/SiGe MODFETs , 2007, IEEE Transactions on Electron Devices.

[19]  Kiyomitsu Onodera,et al.  Device Temperature Measurement of Highly Biased AlGaN/GaN High-Electron-Mobility Transistors , 2003 .

[20]  T. Sadi,et al.  Investigation of Self-Heating Effects in Submicrometer GaN/AlGaN HEMTs Using an Electrothermal Monte Carlo Method , 2006, IEEE Transactions on Electron Devices.