论文信息 - Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

We prepared InAs0.02Sb0.98 on semi‐insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).

Kwong-Kit Choi | B. F. Levine | Alfred Y. Cho | Clyde G. Bethea | M. Y. Yen

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