论文信息 - Surface Observation of 4H-SiC (0001) Planarized by Catalyst-Referred Etching

Surface Observation of 4H-SiC (0001) Planarized by Catalyst-Referred Etching

We have developed a novel planarization method called catalyst-referred etching (CARE), which can planarize SiC substrates without the use of an abrasive. In this method, platinum is used as an oxidation catalyst. The surface of CARE-processed 4H-SiC (0001) substrates are atomically flat all over the wafer. It is found that the surface of CARE-processed substrates is composed of alternating wide and narrow terraces with single bilayer-height steps, regardless of the off-cut angle. This unique structure is induced by the differences in the chemical stabilities of the terraces.

[1] T. Fuyuki,et al. Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching , 2010 .

[2] T. Chassagne,et al. Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials , 2010 .

[3] Y. Sano,et al. Termination dependence of surface stacking at 4 H -SiC ( 0001 ) − 1 × 1 : Density functional theory calculations , 2009 .

[4] Tatsuo Fujimoto,et al. Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications , 2008 .

[5] Osamu Eryu,et al. Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing , 2008 .

[6] T. Okamoto,et al. Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution , 2008 .

[7] Hidekazu Mimura,et al. Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst , 2007 .

[8] Hidekazu Mimura,et al. Novel abrasive-free planarization of 4H-SiC (0001) using catalyst , 2006 .

[9] A. Catellani,et al. Surface-induced stacking transition at SiC(0001) , 2002 .