Comparison of threshold current and microwave modulation of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs single quantum well lasers
暂无分享,去创建一个
Lester F. Eastman | Paul J. Tasker | William J. Schaff | S. D. Offsey | P. Tasker | L. Eastman | W. Schaff | S. Offsey
[1] Lester F. Eastman,et al. Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy , 1989 .
[2] Eli Yablonovitch,et al. Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .
[3] L. A. Coldren,et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .