Random telegraph signals in silicon‐on‐insulator metal‐oxide‐ semiconductor transistors

Possible physical mechanisms for random telegraph signal (RTS) ‐like fluctuations in the front‐channel drain current of a silicon‐on‐insulator (SOI) metal‐oxide‐semiconductor (MOS) transistor are discussed. Particular emphasis is on two RTS mechanisms which are believed to be typical for a SOI MOS transistor. The first one is related to carrier trapping in the Si film, by a deep‐level trap in the depletion region. As such, this type of RTS is more or less complementary to the standard behavior, which is caused by carrier trapping through a near‐interface oxide trap. Second, it is demonstrated experimentally that by varying the back‐gate bias of a thin‐film SOI MOS transistor ‘‘new’’ RTSs may be detected.

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