16.6- and 28-GHz Fully Integrated CMOS RF Switches With Improved Body Floating

This paper presents two fully integrated CMOS transmit/receive (T/R) switches with improved body-floating operations. The first design exploits an improved transistor layout with asymmetric drain-source region, which reduces the drain-source feed-through for body-floated RF switches. In the second design, a switched body-floating technique is proposed, which reconfigures the body-floating condition of a switch transistor in the ON and OFF states. Both designs are fabricated in a standard 0.13-mum triple-well CMOS process. With regard to 2-dB insertion loss, the switch with asymmetric drain-source achieves 28-GHz bandwidth, which is among the highest reported frequencies for CMOS T/R switches. The bandwidth of the switched body-floating design is 16.6 GHz. There is approximately 5 dB better isolation obtained in the switched body-floating design. With the resistive double-well body-floating technique, 26.5- and 25.5-dBm input 1-dB compression point (P1dB) are obtained, respectively. Both designs consume only 150 mum times 100 mum die area. The demonstrated T/R switches are suitable for high-frequency and wideband transceivers.

[1]  N. Suematsu,et al.  21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs) , 2004, IEEE Journal of Solid-State Circuits.

[2]  Zuo-Min Tsai,et al.  Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance , 2006, IEEE Transactions on Microwave Theory and Techniques.

[3]  A. Furukawa,et al.  A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R-MMIC front-end with a low insertion loss switch , 2001, IEEE J. Solid State Circuits.

[4]  Qiang Li,et al.  CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency , 2007, IEEE Journal of Solid-State Circuits.

[5]  Zhenbiao Li,et al.  5.8-GHz CMOS T/R switches with high and low substrate resistances in a 0.18-μm CMOS process , 2003 .

[6]  M. Schwerd,et al.  Wide-band VCOs in SiGe production technology operating up to about 70 GHz , 2003, IEEE Microwave and Wireless Components Letters.

[7]  C. Nguyen,et al.  Ultra-Compact High-Linearity High-Power Fully Integrated DC–20-GHz 0.18-$\mu{\hbox {m}}$ CMOS T/R Switch , 2007, IEEE Transactions on Microwave Theory and Techniques.

[8]  K. O. Kenneth,et al.  A 0.5-μm CMOS T/R switch for 900-MHz wireless applications , 2001, IEEE J. Solid State Circuits.

[9]  Didier Belot,et al.  A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band , 2003, IEEE J. Solid State Circuits.

[10]  S.S. Wong,et al.  Integrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4-GHz and 5.2-GHz applications , 2004, IEEE Journal of Solid-State Circuits.

[11]  K. O. Kenneth,et al.  15-GHz fully integrated nMOS switches in a 0.13-μm CMOS process , 2005, IEEE J. Solid State Circuits.