Energy band structure of AlxGa1-xAs

The electronic band structure of the semiconducting alloy AlxGa1-xAs is calculated by the empirical pseudopotential method and by an extended virtual crystal approximation. The effect of compositional disorder on the lowest direct energy gap is calculated and found to be small. The influence of positional disorder is also discussed. Our results for the most important structures in the optical spectrum are in good agreement with experimental data over the full compositional range.

[1]  P. Lin-Chung,et al.  Electronic Structures of GaAs-Ga 1-x Al x As Repeated Monolayer Heterostructure , 1977 .

[2]  D. E. Aspnes,et al.  GaAs lower conduction-band minima: Ordering and properties , 1976 .

[3]  F. Aymerich,et al.  Exchange and correlation energy in semiconductors , 1976 .

[4]  James R. Chelikowsky,et al.  Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .

[5]  Philip B. Allen,et al.  Theory of the temperature dependence of electronic band structures , 1976 .

[6]  George David Pettit,et al.  Some optical properties of the AlxGa1−xAs alloys system , 1976 .

[7]  K. Unger,et al.  Band Structure of Ga1−xInxAs , 1976 .

[8]  W. Junge,et al.  Temperature dependence of the indirect absorption edge in AlxGa1−xAs , 1976 .

[9]  S. Wartewig,et al.  EPR Studies on Silicon-Doped Alx Ga1−x As Epitaxial Layers , 1975 .

[10]  I. Topol,et al.  Band structure and electronic properties of InP , 1975 .

[11]  H. Kressel.  Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article) , 1974 .

[12]  J. C. Phillips,et al.  Nonlocal pseudopotentials for Ge and GaAs , 1974 .

[13]  R Hill,et al.  Energy-gap variations in semiconductor alloys , 1974 .

[14]  B. Monemar,et al.  Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra , 1973 .

[15]  I. Topol,et al.  Interpretation of Optical Spectra in AlAs , 1973 .

[16]  B. Miller,et al.  Photoluminescence of AlxGa1−xAs , 1972 .

[17]  John F. Vetelino,et al.  Debye-Waller Factor for Zinc-Blende-Type Crystals , 1972 .

[18]  J. L. Shay.  Temperature Dependence of the Energy Gap in GaAs , 1971 .

[19]  A. Onton,et al.  Refractive Index of AlAs , 1971 .

[20]  W. M. Yim.  Direct and Indirect Optical Energy Gaps of AlAs , 1971 .

[21]  O. Berolo,et al.  Electroreflectance Spectra of AlxGa1−xAs Alloys , 1971 .

[22]  A. Cho,et al.  Molecular beam epitaxy and optical evaluation of AlxGa1-xAs , 1971 .

[23]  T. K. Bergstresser,et al.  Electronic Structures of Semiconductor Alloys , 1970 .

[24]  H. Casey,et al.  Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps , 1969 .

[25]  J. F. Black,et al.  Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy Gap , 1966 .

[26]  S. Ku,et al.  Preparation and Properties of AlAs ‐ GaAs Mixed Crystals , 1966 .

[27]  K. Lawley.  Vapor Growth Parameters and Impurity Profiles on N ‐ Type GaAs Films Grown on N + ‐ GaAs by the Hydrogen‐Water Vapor Process , 1966 .

[28]  H. Brühl.  Die mittlere quadratische Auslenkung der Atome und der Nachweis eines statischen Verzerrungsanteils in Al1–xGaxAs mit Röntgenbeugungsmethoden , 1975 .

[29]  A. Baldereschi,et al.  Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1−x , 1975 .

[30]  I. Topol,et al.  Band Structure and Pseudopotential Form Factors for AlAs , 1973 .

[31]  H. Brühl,et al.  Short range order parameters for ternary zincblende substitutional solid solutions , 1973 .

[32]  M. Panish,et al.  Ga-Al-As: Phase, thermodynamic and optical properties , 1969 .