论文信息 - Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV - 字舞流文

Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Y. Hao | Q. Feng | Jincheng Zhang | Hong Zhou | Yangyang Gao | Zhaoqing Feng | Yuncong Cai | Zhuangzhuang Hu | Kui Dang