Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

Data are presented showing that the threshold current density Jth(T) of quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes, grown by MO‐CVD, is less temperature dependent than that of conventional DH lasers. T0 in the usual expression Jth∝exp(T/T0) can be high as 437 °C. This behavior is explained in terms of the steplike density of states and the disturbed electron and phonon distribution functions of the quantum‐well active region.

[1]  N. Holonyak,et al.  Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition , 1979 .

[2]  N. Holonyak,et al.  Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser , 1979 .

[3]  N. Holonyak,et al.  Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition , 1979 .

[4]  M. Adams.  Theoretical effects of exponential band tails on the properties of the injection laser , 1969 .

[5]  P. D. Dapkus,et al.  Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition , 1979 .

[6]  P. Dapkus,et al.  Preparation and properties of Ga 1-x Al x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition , 1979 .

[7]  R. Dupuis.  700‐h continuous room‐temperature operation of AlxGa1−xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition , 1979 .

[8]  P. Liao,et al.  Vacuum ultraviolet picosecond pulse generation using cw mode‐locked dye lasers , 1980 .

[9]  Henry Kressel,et al.  The temperature dependence of threshold current for double‐heterojunction lasers , 1979 .

[10]  I. Hayashi,et al.  GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers , 1971 .

[11]  G. E. Stillman,et al.  LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region , 1977 .

[12]  Frank Stern,et al.  Spontaneous and Stimulated Recombination Radiation in Semiconductors , 1964 .

[13]  A. R. Goodwin,et al.  Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasers , 1975 .

[14]  P. D. Dapkus,et al.  Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition , 1978 .

[15]  N. Holonyak,et al.  Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K) , 1978 .