The influence of bandgap narrowing on the I–V characteristics of a MOSFET

Abstract Modifications of Pierret-Shields model which take into account either apparent or physical bandgap narrowing are presented. The influence of bandgap narrowing on the I–V characteristics of a MOSFET is theoretically examined through comparison of the modified models with the original Pierret-Shields model for various device parameters. It is proved that bandgap narrowing affects significantly performance of a MOSFET in the subthreshold and the near-threshold regions.

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