论文信息 - Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric - 字舞流文

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Baoshun Zhang | Guohao Yu | K. Fu | Yaming Fan | Yong Cai | H. Fu | Xuguang Deng | Xiaodong Zhang | Z. Dong | Peipei Zhang | L. Zhang | Xing Wei | Hui Zhang | X. Wei