Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

[1]  G. Bruno,et al.  The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow discharge , 1986 .

[2]  G. Bruno,et al.  Effect of argon addition to SiCl4-H2 mixtures on the optical properties of glow discharge silicon films , 1985 .

[3]  A. Clark,et al.  A study of the microstructure of a-Si:H using spectroscopic ellipsometry measurements , 1985 .

[4]  P. Capezzuto,et al.  Mechanism of etching, polymerization and deposition in R.F. (radio frequency) discharges , 1985 .

[5]  R. D'agostino,et al.  Optical emission spectroscopy and actinometry in CCl4-Cl2 radiofrequency discharges , 1984 .

[6]  I. Rosenthal,et al.  Radical-molecule and ion-molecule mechanisms in the polymerization of hydrocarbons and chlorosilanes in r.f. plasmas at low pressures (below 1.0 Torr) , 1984 .

[7]  Henry U. Lee,et al.  LIF and OES detection of radical species in SiF4 + H2 plasmas , 1984 .

[8]  A. Grill,et al.  Mechanism and kinetics of tetrachlorosilane reactions in an argon‐hydrogen microwave plasma , 1984 .

[9]  G. Turban Basic phenomena in reactive low pressure plasmas used for deposition and etching-current status , 1984 .

[10]  M. Hirose,et al.  Properties of a-Si:H prepared by the photochemical decomposition of Si2H6 , 1983 .

[11]  G. Bruno,et al.  Doping of microcrystalline Si:H,Cl films in R.F. glow discharge , 1983 .

[12]  R. Weil,et al.  The location, evolution, and role of fluorine in glow discharge a-Si:F , 1983 .

[13]  G. Bruno,et al.  Deposition rate and structural properties of microcrystalline glow discharge Si:H, Cl films , 1983 .

[14]  S. Vepřek,et al.  Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditions , 1983 .

[15]  A. Grill,et al.  Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation , 1983 .

[16]  G. Bruno,et al.  Structural and some other properties of silicon deposited in an SiCl4H2 r.f. discharge , 1982 .

[17]  Vincent M. Donnelly,et al.  The design of plasma etchants , 1981 .

[18]  G. Fortunato,et al.  Characterization and luminescence of a-Si:H:Cl films , 1981 .

[19]  Yukio Osaka,et al.  A New Technique of Boron Doping in Si:H Films , 1981 .

[20]  F. Kampas,et al.  Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys , 1980 .

[21]  H. Kurata,et al.  Novel Deposition Technique of a-Si: H –Silane Glow Discharge in Magnetic Field– , 1980 .

[22]  J. Knights,et al.  Growth morphology and defects in plasma-deposited a-Si:H films , 1980 .

[23]  S. Ovshinsky,et al.  Electrical and optical properties of amorphous Si:F:H alloys , 1979 .

[24]  A. Striganov,et al.  Tables of spectral lines of neutral and ionized atoms , 1968 .