Temperature dependence of electromigration dynamics in Al interconnects by real-time microscopy
暂无分享,去创建一个
Real-time transmission electron microscopy (TEM) was used to directly examine the temperature dependence of electromigration-induced void and failure dynamics over the range 200–350 °C. The studies were done using submicron Al interconnects and a special sample stage, which allowed TEM observations to be recorded while heating and passing current through the sample. A novel sample design dramatically minimized any Joule heating in the runners. Our experiments directly reveal that the mechanism responsible for void and failure dynamics at temperatures <250 °C is distinctly different from that at higher temperatures. These results have implications regarding methods used for predicting electromigration reliability at use conditions from accelerated test data.
[1] W. Mullins,et al. Spreading of a void along a singular surface during electromigration: A failure mode , 1997 .
[2] Real-Time Tem Studies of Electromigration in Submicron Aluminum Runners , 1995 .
[3] Oliver Kraft,et al. Electromigration failure by shape change of voids in bamboo lines , 1994 .
[4] Paul S. Ho,et al. Motion of Inclusion Induced by a Direct Current and a Temperature Gradient , 1970 .