Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
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A. S. Grove | C. Sah | O. Leistiko | C. T. Sah | O. Leistiko
[1] J. Yamaguchi,et al. Diffusion of Boron in Silicon through Oxide Layer , 1962 .
[2] C. S. Fuller,et al. Diffusion of donor and acceptor elements in silicon , 1956 .
[3] C. D. Thurmond,et al. THE PRESSURE OF Ga2O OVER GALLIUM-Ga2O3 MIXTURES , 1962 .
[4] C. Sah,et al. Diffusion of phosphorus in silicon oxide film , 1959 .
[5] B. E. Deal. The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam , 1963 .
[6] J. C. Jaeger,et al. Conduction of Heat in Solids , 1952 .
[7] A. Kurtz,et al. Diffusion of Boron into Silicon , 1960 .
[8] G. Backenstoss,et al. Conductivity Mobilities of Electrons and Holes in Heavily Doped Silicon , 1957 .
[9] L. Derick,et al. Surface Protection and Selective Masking during Diffusion in Silicon , 1957 .
[10] E. Tannenbaum,et al. Impurity redistribution and junction formation in silicon by thermal oxidation , 1960 .
[11] A. Kurtz,et al. Diffusion of Gallium in Silicon , 1958 .