论文信息 - Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells

Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells

The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed. key words: nano-electromechanical (NEM) non-volatile memory cell, fringe field effect, beam width

Woo Young Choi | Boram Han

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