论文信息 - Modeling stress-induced void growth in Al-4wt%Cu lines

Modeling stress-induced void growth in Al-4wt%Cu lines

Stress-induced void growth is modeled for the case of a void bounded by two neighbors by invoking the one-dimensional diffusion equation. The resultant equation is then convoluted with an exponential distribution for void spacing to generate the mean void size as a function of time. Volumetric strain, atomic diffusivity and activation energy are then extracted for a given metallization and passivation system by fitting measured mean void size data to the analytical curve.

Timothy D. Sullivan | Stewart E. Rauch

[1] James G. Ryan,et al. Stress-induced voiding in aluminum alloy metallizations , 1991, Other Conferences.

[2] A. D. Romig,et al. Stress-driven diffusive voiding of aluminum conductor lines , 1989, 27th Annual Proceedings., International Reliability Physics Symposium.

[3] F. G. Yost,et al. Voiding due to thermal stress in narrow conductor lines , 1989 .

[4] R.V. Taylor,et al. Stress Induced Voids in Aluminum Interconnects During IC Processing , 1985, 23rd International Reliability Physics Symposium.

[5] S. Ghandhi,et al. The theory and practice of microelectronics , 1984 .

[6] Carl V. Thompson,et al. Development of near‐bamboo and bamboo microstructures in thin‐film strips , 1992 .

[7] Timothy D. Sullivan. Thermal dependence of voiding in narrow aluminum microelectronic interconnects , 1989 .

[8] Martin Braun. Differential equations and their applications , 1976 .