Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime
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Jimmie J. Wortman | K. Ahmed | Effiong Ibok | B. Ogle | John R. Hauser | G. Bains | D. Chi
[1] R. Ashton. Gate oxide thickness measurement using Fowler-Nordheim tunneling , 1990, Proceedings of the 1991 International Conference on Microelectronic Test Structures.
[2] B. Majkusiak,et al. A technical formula for determining the insulator capacitance in a MOS structure , 1992 .
[3] Hiroshi Iwai,et al. Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[4] Eugene A. Irene,et al. Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations , 1995 .
[5] R. L. Meirhaeghe,et al. Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation , 1994 .
[6] C. Sah,et al. Determination of the MOS oxide capacitance , 1975 .
[7] T. Lei,et al. Ellipsometry measurements on SiO2 films for thicknesses under 200Å , 1987 .
[8] J. K. Srivastava,et al. Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy , 1987 .
[9] Y. Taur,et al. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.
[10] Tso-Ping Ma,et al. Electrical properties of high-quality ultrathin nitride/oxide stack dielectrics , 1999 .
[11] D. Aspnes,et al. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry , 1979 .
[12] K. Lehovec,et al. Analysis of C-V data in the accumulation regime of MIS structures , 1976 .
[13] Douglas A. Buchanan,et al. Reliability and integration of ultra-thin gate dielectrics for advanced CMOS , 1997 .
[14] Ernest Y. Wu,et al. Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection , 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
[15] J. A. Pals,et al. Quantization effects in semiconductor inversion and accumulation layers , 1972 .
[16] B. Riccò,et al. Oxide-thickness determination in thin-insulator MOS structures , 1988 .
[17] E. H. Nicollian,et al. Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .
[18] R. Rios,et al. Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.
[19] B. Fowler,et al. Relationships between the material properties of silicon oxide films deposited by electron cyclotron resonance chemical vapor deposition and their use as an indicator of the dielectric constant , 1994 .
[20] J. Maserjian,et al. Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon , 1974 .
[21] E. Taft. The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461A , 1978 .
[22] T. Lei,et al. ERROR REDUCTION IN THE ELLIPSOMETRIC MEASUREMENT ON THIN-FILMS , 1988 .
[23] P. Woerlee,et al. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions , 1994 .