论文信息 - Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge - 字舞流文

Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

P. Kop’ev | A. Toropov | S. Ivanov | T. Shubina | V. A. Vekshin | V. V. Mamutin | V. N. Zhmerik | A. Lebedev