论文信息 - Attenuated phase shifting masks in combination with off-axis illumination: a way towards quarter micron DUV lithography for random logic applications

Attenuated phase shifting masks in combination with off-axis illumination: a way towards quarter micron DUV lithography for random logic applications

Abstract The combination of off-axis illumination (OAI) schemes with ‘weak’ phase shifting techniques is promising to improve the process latitudes of both dense and isolated features. In this paper, the performance of this combination to print 0.25 μm poly levels for logic circuits is investigated experimentally and by simulations, using DUV stepper ( λ = 0.248 μm , 0.42 NA ). Various resist types have been addressed, mainly with respect to proximity issues.

Ki-Ho Baik | K. Ronse | L. Van den hove | Rainer Pforr | R. Jonckheere

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