论文信息 - Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy

Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy

In‐doped GaAs epilayers have been grown by molecular beam epitaxy. This work investigates the relatively unexplored In doping concentration in the range of 1017–1019 cm−3. Enhancement in Hall mobility and photoluminescence intensity have been observed. Proper isoelectronic doping may lead to reduction of the unintentional impurity level.

M. K. Lee | T. Chiu | A. Dayem | E. Agyekum

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