The effects of doping profile on the power output, efficiency, and operating frequency of BARITT devices are considered. An approximate analysis is presented which can be used as a guide for the design of such devices and shows the important parameters which affect the operation of the device. This is followed by a detailed computer simulation of various device structures and the inherent limitations of the approximate analysis are discussed. The computer simulations indicate that the Si and GaAs p+-n-i-p+and p+-n-p-p+structures are most promising with regard to power output and efficiency, respectively. Other results concerning high-frequency and low-voltage operation are also presented.
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