论文信息 - Interface degradation and dielectric breakdown of thin oxides due to homogeneous charge injection

Interface degradation and dielectric breakdown of thin oxides due to homogeneous charge injection

The interface stability of 9- to 20-nm gate oxides is evaluated during homogeneous charge injection. In addition, the question of the extent to which interface degradation is correlated to dielectric breakdown is addressed. The measurements reveal that thinner oxides are more resistant to interface degradation. In addition, significantly reduced charge trapping in thin oxides results in improved threshold voltage stability. For both gate polarities, oxide breakdown exhibits no direct correlation to interface state density. >

M. Kerber | U. Schwalke

[1] Seiji Horiguchi,et al. Interface‐trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide , 1985 .

[2] M. L. Reed,et al. Chemistry of Si‐SiO2 interface trap annealing , 1988 .

[3] C. Hu,et al. Characterization of very thin gate-oxide MOS devices , 1984, 1984 International Electron Devices Meeting.

[4] S. Holland,et al. Hole trapping and breakdown in thin SiO2 , 1986, IEEE Electron Device Letters.

[5] Z. Weinberg,et al. The relation between positive charge and breakdown in metal‐oxide‐silicon structures , 1987 .

[6] D. Dimaria,et al. Correlation of trap creation with electron heating in silicon dioxide , 1987 .

[7] H. Chan,et al. Temperature dependence of charge generation and breakdown in SiO 2 , 1986 .

[8] M. Liang,et al. MOSFET Degradation due to stressing of thin oxide , 1984, 1982 International Electron Devices Meeting.

[9] Marc Ilegems,et al. Charge generation in thin SiO2 polysilicon-gate MOS capacitors , 1987 .

[10] M. Liang,et al. Thickness dependence of oxide breakdown under high field and current stress , 1987 .

[11] C. N. Berglund. Surface states at steam-grown silicon-silicon dioxide interfaces , 1966 .

[12] S. Bardy,et al. Degradation of metal/oxide/semiconductor structures by Fowler-Nordheim tunnelling injection , 1987 .

[13] Chenming Hu,et al. Electrical breakdown in thin gate and tunneling oxides , 1985, IEEE Transactions on Electron Devices.