High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits

We report selective-area growth of high-crystalline-quality InGaAs-based photodetectors with optimized InP/GaAs buffers on patterned (100)-oriented silicon-on-insulator (SOI) substrates by metal-organic chemical vapor deposition. The composite GaAs and InP buffer was grown using a two-temperature method. The island morphology of the low-temperature GaAs nucleation layer inside the growth well of the SOI substrate was optimized. A medium temperature GaAs layer was inserted prior to the typical high-temperature GaAs to further decrease the dislocation densities and antiphase boundaries. Both normal-incidence photodetectors and butt-coupled waveguide photodetectors were fabricated on the same substrate and showed a low dark current and high-speed performance. This result demonstrates a good potential of integrating photonic and electronic devices on the same Si substrate by direct epitaxial growth.

[1]  Di Liang,et al.  Electrically-pumped compact hybrid silicon microring lasers for optical interconnects. , 2009, Optics express.

[2]  Pallab Bhattacharya,et al.  Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon. , 2008, Optics express.

[3]  T. Nagatsuma,et al.  Uni-traveling-carrier photodiodes , 1997 .

[4]  Efthymios Rouvalis,et al.  Traveling-wave Uni-Traveling Carrier photodiodes for continuous wave THz generation. , 2010, Optics express.

[5]  John E. Ayers,et al.  The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction , 1994 .

[6]  D Van Thourhout,et al.  InP/InGaAs Photodetector on SOI Photonic Circuitry , 2010, IEEE Photonics Journal.

[7]  W. Prost,et al.  High performance III/V RTD and PIN diode on a silicon (001) substrate , 2007 .

[8]  K. Lau,et al.  High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate , 2014, OFC 2014.

[9]  K. Wecht,et al.  Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing , 1986 .

[10]  J. Bowers,et al.  III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects , 2010 .

[11]  Yasuhiko Arakawa,et al.  Growth of InAs∕Sb:GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3μm band , 2008 .

[12]  Hadis Morkoç,et al.  Dislocation reduction in epitaxial GaAs on Si(100) , 1986 .

[13]  G. B. Stringfellow.  8 – Specific Materials , 1999 .

[14]  30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance , 2012, 2012 International Electron Devices Meeting.

[15]  N. El-Masry,et al.  Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices , 1988 .

[16]  Hadis Morkoç,et al.  Gallium arsenide and other compound semiconductors on silicon , 1990 .

[17]  M. Lipson,et al.  High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. , 2008, Optics express.

[18]  K. Lau,et al.  30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain , 2012, IEEE Electron Device Letters.

[19]  Paul Crozat,et al.  High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited] , 2013 .

[20]  Avi Zadok,et al.  Electrically pumped hybrid evanescent Si/InGaAsP lasers. , 2009, Optics letters.

[21]  K. Lau,et al.  Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD , 2007, IEEE Electron Device Letters.

[22]  Linjie Zhou,et al.  Silicon electro-optic modulators using p-i-n diodes embedded 10-micron-diameter microdisk resonators. , 2006, Optics express.

[23]  M. Romagnoli,et al.  An electrically pumped germanium laser. , 2012, Optics express.

[24]  E. Fitzgerald,et al.  Scanning force microscopy studies of GaAs films grown on offcut Ge substrates , 1998 .

[25]  Shen Ren,et al.  High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration , 2009, IEEE Electron Device Letters.

[26]  M. Watts,et al.  Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.

[27]  Kei May Lau,et al.  High-Speed Normal-Incidence p-i-n InGaAs Photodetectors Grown on Silicon Substrates by MOCVD , 2012, IEEE Photonics Technology Letters.

[28]  D. D. Cannon,et al.  Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications , 2005 .

[29]  Kei May Lau,et al.  Epitaxial III–V-on-silicon waveguide butt-coupled photodetectors , 2012, The 9th International Conference on Group IV Photonics (GFP).

[30]  K. Lau,et al.  Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays , 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

[31]  O. P. Pchelyakov,et al.  GaAs epitaxy on Si substrates: modern status of research and engineering , 2008 .