Electrical characterization of thin film integral passive devices on polyimide-based packaging structures

Thin film integral passive devices, consisting of chromium silicide (CrSi) resistors, tantalum oxide (TaO) dielectric capacitor s, and spiral copper inductors, were fabricated on polyimide-based electronic packaging structures and electrically characterized. The desig n and processing techniques used to create these embedded passive devices are discussed. Thin film resistors with resistances from 8 0 W to 35.7 KW were characterized in this work. The capacitance value of the tantalum oxide dielectric capacitors, with capacitances from 2.7 pF to 41.3 nF, was essentially constant up to 1 GHz. Parasitics play a significant role in the characteristics of the higher valued thin film resistors and capacitors. Spiral copper inductors with inductances from 5.8 nH to 106.7 nH and a quality factor as high as 27 were demon st ated.