Power semiconductor devices for variable-frequency drives

Advances in power semiconductor technology are the driving force for enhancement of the performance of variable-frequency motor drives. The development of power semiconductor devices with MOS-gate structures has enabled the control of large amounts of energy with very little input power. An equally important advancement has taken place in the development of improved rectifiers with reduced losses for high-frequency operation. In addition, the advent of MOS-gated power switches has led to the creation of smart power technology which makes compact systems with built-in diagnostic and protection functions commercially feasible. Although the power semiconductor chips are all made from silicon today, recent analysis has indicated that devices fabricated from silicon carbide have the potential for completely displacing silicon devices in the long range. >

[1]  M. Naito,et al.  High-speed low-loss p-n diode having a channel structure , 1984, IEEE Transactions on Electron Devices.

[2]  Bantval J. Baliga,et al.  An overview of smart power technology , 1991 .

[3]  Mutsuhiro Mori,et al.  A novel soft and fast recovery diode (SFD) with thin p-layer formed by Al-Si electrode , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[4]  M. Naito,et al.  High current characteristics of asymmetrical p-i-n diodes having low forward voltage drops , 1976, IEEE Transactions on Electron Devices.

[5]  S. Tandon,et al.  High-voltage current saturation in emitter switched thyristors , 1991, IEEE Electron Device Letters.

[6]  M.S. Adler,et al.  Power semiconductor switching devices—A comparison based on inductive switching , 1982, IEEE Transactions on Electron Devices.

[7]  Bantval J. Baliga,et al.  A study of EST's short-circuit SOA , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[8]  M. Stoisiek,et al.  MOS GTO—A turn off thyristor with MOS-controlled emitter shorts , 1985, 1985 International Electron Devices Meeting.

[9]  B. J. Baliga,et al.  Comparison of 6H-SiC, 3C-SiC, and Si for power devices , 1993 .

[10]  B.J. Baliga,et al.  Switching speed enhancement in insulated gate transistors by electron irradiation , 1984, IEEE Transactions on Electron Devices.

[11]  Bimal K. Bose,et al.  Power electronics and motion control-technology status and recent trends , 1992, PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference.

[12]  Bantval J. Baliga,et al.  Characteristics of the emitter-switched thyristor , 1991 .

[13]  M.S. Shekar,et al.  A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance , 1991, IEEE Electron Device Letters.

[14]  Bantval J. Baliga,et al.  Controlling the characteristics of the MPS rectifier by variation of area of Schottky region , 1993 .

[15]  M.S. Adler,et al.  The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device , 1984, IEEE Transactions on Electron Devices.

[16]  Bantval J. Baliga,et al.  Comparison of high voltage rectifier structures , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[17]  Wolfgang Fichtner,et al.  Switching behavior and current handling performance of MCT:IGBT cell ensembles , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[18]  W. Fichtner,et al.  Design aspects of MOS controlled thyristor elements , 1989, International Technical Digest on Electron Devices Meeting.

[19]  B. Mokrytzki.  Survey of adjustable frequency technology - 1991 , 1991, Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting.

[20]  H. Schlangenotto,et al.  Improved reverse recovery of self-adaptingp emitter efficiency diodes (SPEED) , 1990 .

[21]  B. J. Baliga,et al.  Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.

[22]  B. J. Baliga,et al.  Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors , 1979 .

[23]  F. Sawitzki,et al.  Improved recovery of fast power diodes with self-adjusting p emitter efficiency , 1989, IEEE Electron Device Letters.

[24]  V.A.K. Temple.  MOS Controlled thyristors (MCT's) , 1984, 1984 International Electron Devices Meeting.

[25]  B. J. Baliga,et al.  Evolution of MOS-bipolar power semiconductor technology , 1988, Proc. IEEE.

[26]  B. J. Baliga,et al.  Silicon-carbide high-voltage (400 V) Schottky barrier diodes , 1992, IEEE Electron Device Letters.

[27]  M.S. Adler,et al.  New high voltage IC technology , 1984, 1984 International Electron Devices Meeting.