论文信息 - Circuit simulation of a silicon-carbide MOSFET considering the effect of the parasitic elements on circuit boards by using S-parameters - 字舞流文

Circuit simulation of a silicon-carbide MOSFET considering the effect of the parasitic elements on circuit boards by using S-parameters

H. Otake | Tatsuya Yanagi | K. Nakahara | H. Sakairi | N. Kuroda | R. Takeda | Seiya Kitagawa | Noriyoshi Hashimoto