Interface electroluminescence of confined carriers in type II broken-gap p-GaInAsSbp-InAs single heterojunction
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K. D. Moiseev | Yu. P. Yakovlev | Georgy G. Zegrya | M. P. Mikhailova | M. Mikhailova | K. Moiseev | Y. Yakovlev | G. Zegrya
[1] A. R. Adams,et al. Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .
[2] Yu. P. Yakovlev,et al. 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers , 1994 .
[3] M. Mikhailova,et al. Type II heterojunctions in the GaInAsSb/GaSb system , 1994 .
[4] L. R. Dawson,et al. Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions , 1994 .
[5] Carlo Sirtori,et al. Quantum Cascade Laser , 1994, Science.
[6] George W. Turner,et al. Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers , 1994 .
[7] H. Choi,et al. InAs1−xSbx/In1−yGayAs multiple‐quantum‐well heterostructure design for improved 4–5 μm lasers , 1994 .
[8] Yong-Hang Zhang,et al. CONTINUOUS WAVE OPERATION OF INAS/INASXSB1-X MIDINFRARED LASERS , 1995 .