Numerical investigation of heat and mass transfer flow under the influence of silicon carbide by means of plasma-enhanced chemical vapor deposition vertical reactor

The effect of characteristics flow (contour of velocity), mass transfer (Sherwood number) and heat transfer (Nu number) on the growth rate of silicon carbide by means of plasma-enhanced chemical vapor deposition vertical reactor is investigated. The species transport and thermal fluid transport with chemical reaction are taken into account. The steady-state laminar fluid flow and gas flow having ideal behavior are considered. A mixture of silane and propane (2% molar) as main reactant gases and hydrogen (96% molar) as propellant gas are injected into the reactor. Four different diameters of shower head, three different substrate rotation speeds and five different temperatures of the substrate are used. The finite volume method is employed to solve the problem. The governing equations are solved by upwind differencing scheme. The assumption of speed–pressure coupling leads to use of semi-implicit method for pressure-linked equations to solve the governing equation. It is found that the deposition rate reduces with the shower head diameter and value of substrate temperature and enhances with rotational speed of the substrate. Furthermore, the best shower head diameter to achieve maximum rate of deposition is 1 mm. At the end, a comparison as a limiting case of the considered problem with the existing studies is made. Comparing the results of this experiment with prior studies has shown acceptable consistency.

[1]  Marin Marin,et al.  Thermoelasticity of initially stressed bodies. Asymptotic equipartition of energies , 1998 .

[2]  John N. Shadid,et al.  Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design , 2000 .

[3]  Hua‐Chi Cheng,et al.  Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar , 2009 .

[4]  Pramod P. Khargonekar,et al.  A control oriented modeling methodology for plasma enhanced chemical vapor deposition processes , 1995, Proceedings of 1995 American Control Conference - ACC'95.

[5]  S. Sakrani,et al.  Effect of substrate temperature on the properties of diamond-like carbon deposited by PECVD in methane atmosphere , 2006 .

[6]  Guillermo Santana,et al.  Effect of deposition temperature on polymorphous silicon thin films by PECVD: Role of hydrogen , 2016 .

[7]  F. B. Colombo,et al.  Simulation of PECVD SiO2 Deposition Using a Cellular Automata Approach , 2012 .

[8]  M. Mehregany,et al.  Amorphous silicon carbide films by plasma-enhanced chemical vapor deposition , 1993, [1993] Proceedings IEEE Micro Electro Mechanical Systems.

[9]  B. Phillips,et al.  Effect of Showerhead Configuration on Coherent Raman Spectroscopically Monitored Pulsed Radio Frequency Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films , 2004 .

[10]  Arokia Nathan,et al.  Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains , 2015 .

[11]  W. Cheng,et al.  Simulation and optimization of silicon thermal CVD through CFD integrating Taguchi method , 2008 .

[12]  Ningyi Yuan,et al.  Effect of electrode architecture and process parameters on distribution of SiH3 in a PECVD system , 2011 .

[13]  AkbarNoreen Sher,et al.  Study of heat transfer on physiological driven movement with CNT nanofluids and variable viscosity , 2016 .

[14]  L. Faraone,et al.  Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films , 2005 .

[15]  Chang-long Cai,et al.  Study on the Performance of PECVD Silicon Nitride Thin Films , 2013 .

[16]  Won Seok Choi,et al.  Synthesis and characterization of diamond-like carbon protective AR coating , 2004 .

[17]  Doo Jin Choi,et al.  The Study of Dielectric Constant Change of a-SiC:H Films Deposited by Remote PECVD with Low Deposition Temperatures , 2009 .

[18]  Dharmendra Tripathi,et al.  MHD convective heat transfer of nanofluids through a flexible tube with buoyancy: A study of nano-particle shape effects , 2017 .

[19]  Xiao Feng Shang,et al.  The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System , 2011 .

[20]  Dharmendra Tripathi,et al.  MODELING NANOPARTICLE GEOMETRY EFFECTS ON PERISTALTIC PUMPING OF MEDICAL MAGNETOHYDRODYNAMIC NANOFLUIDS WITH HEAT TRANSFER , 2016 .

[21]  B. Schröder,et al.  Simulations of the gas flux distribution for different gas showers and filament geometries on the large-area deposition of amorphous silicon by hot-wire CVD , 2002 .

[22]  Dharmendra Tripathi,et al.  Study of heat transfer on physiological driven movement with CNT nanofluids and variable viscosity , 2016, Comput. Methods Programs Biomed..

[23]  Marin Marin,et al.  On Harmonic Vibrations in Thermoelasticity of Micropolar Bodies , 1998 .

[24]  Young-Man Jeong,et al.  Preparation of super-hydrophilic amorphous titanium dioxide thin film via PECVD process and its application to dehumidifying heat exchangers , 2009 .

[25]  Douglas L. Schulz,et al.  Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

[26]  Dharmendra Tripathi,et al.  A numerical study of magnetohydrodynamic transport of nanofluids over a vertical stretching sheet with exponential temperature-dependent viscosity and buoyancy effects , 2016 .

[27]  Guoguan Wen,et al.  Substrate Temperature Influence on Properties of Amorphous Silicon-Germanium Thin Films Prepared by RF-PECVD , 2011, 2011 Symposium on Photonics and Optoelectronics (SOPO).

[28]  C. Soong,et al.  Thermo-Flow Structure and Epitaxial Uniformity in Large-Scale Metalorganic Chemical Vapor Deposition Reactors with Rotating Susceptor and Inlet Flow Control , 1998 .

[29]  Robert F. Hicks,et al.  Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure , 2004 .

[30]  Zhao Ying,et al.  Effect of substrate temperature and pressure on properties of microcrystalline silicon films , 2006 .

[31]  Marin Marin,et al.  A domain of influence theorem for microstretch elastic materials , 2010 .

[32]  孙健,et al.  Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films , 2006 .

[33]  Jin-Hyo Boo,et al.  Characteristics of thermal-flow fields in a PECVD reactor with various operating conditions , 2007 .

[34]  Swati Ray,et al.  Effect of gas flow rates on PECVD-deposited nanocrystalline silicon thin film and solar cell properties , 2008 .

[35]  D. Tripathi,et al.  Thermally developing MHD peristaltic transport of nanofluids with velocity and thermal slip effects , 2016 .