Carrier collection in a semiconductor quantum well
暂无分享,去创建一个
[1] N. Holonyak,et al. Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) , 1978 .
[2] N. Holonyak,et al. Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers , 1978 .
[3] P. D. Dapkus,et al. Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition , 1978 .
[4] Hisashi Shichijo,et al. Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction , 1977 .
[5] P. D. Dapkus,et al. Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .
[6] G. E. Stillman,et al. LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region , 1977 .
[7] D. Lynch,et al. Ordering and Absolute Energies of the L6c and X6c Conduction Band Minima in GaAs , 1976 .
[8] H. Schade,et al. Calculated energy distributions of electrons emitted from negative electron affinity GaAs: Cs–O surfaces , 1973 .
[9] L. W. James,et al. Transport Properties of GaAs Obtained from Photoemission Measurements , 1969 .
[10] M. H. Hebb. Mechanism of Exciton-Enhanced Photoelectric Emission in Alkali Halides , 1951 .
[11] N. Holonyak,et al. Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K) , 1978 .