Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
暂无分享,去创建一个
Safumi Suzuki | Masahiro Asada | Hiroki Sugiyama | Haruki Yokoyama | Atsushi Teranishi | Kaoru Shizuno | A. Teranishi | H. Sugiyama | H. Yokoyama | M. Asada | S. Suzuki | K. Shizuno
[1] Safumi Suzuki,et al. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators , 2008 .
[2] Qing Hu,et al. 186 K Operation of Terahertz Quantum-Cascade Lasers Based on a Diagonal Design , 2009 .
[3] E. Linfield,et al. Terahertz semiconductor-heterostructure laser , 2002, Nature.
[4] M. Asada,et al. Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode , 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.
[5] H. Eisele,et al. Third-Harmonic Power Extraction From InP Gunn Devices up to 455 GHz , 2009, IEEE Microwave and Wireless Components Letters.
[6] T. C. McGill,et al. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .
[7] Behzad Razavi. A 300-GHz fundamental oscillator in 65-nm CMOS technology , 2010, VLSIC 2010.
[8] Masayoshi Tonouchi,et al. Cutting-edge terahertz technology , 2007 .
[9] Mau-Chung Frank Chang,et al. Generating terahertz signals in 65nm CMOS with negative-resistance resonator boosting and selective harmonic suppression , 2010, 2010 Symposium on VLSI Circuits.
[10] V. Jain,et al. InP HBTs for THz frequency integrated circuits , 2011, IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials.
[11] Safumi Suzuki,et al. Extremely High Peak Current Densities of over 1×106 A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy , 2010 .
[12] M. Feng,et al. InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
[13] M. Reddy,et al. Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz , 1997, IEEE Electron Device Letters.
[14] Jun-ichi Nishizawa,et al. Development of TUNNETT Diode as Terahertz Device and Its Applications , 2006, 2006 64th Device Research Conference.
[15] B. Williams. Terahertz quantum cascade lasers , 2007, 2008 Asia Optical Fiber Communication & Optoelectronic Exposition & Conference.
[16] Hideaki Matsuzaki,et al. Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers , 2005 .
[17] Safumi Suzuki,et al. Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas , 2010 .
[18] Safumi Suzuki,et al. One THz harmonic oscillation of resonant tunneling diodes , 2005 .
[19] Safumi Suzuki,et al. Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures , 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.