Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks

A new methodology for designing and implementing high-efficiency broadband Class-E power amplifiers (PAs) using high-order low-pass filter-prototype is proposed in this paper. A GaN transistor is used in this work, which is carefully modeled and characterized to prescribe the optimal output impedance for the broadband Class-E operation. A sixth-order low-pass filter-matching network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances within an octave bandwidth (L-band). Simulation and experimental results show that an optimal Class-E PA is realized from 1.2 to 2 GHz (50%) with a measured efficiency of 80%-89%, which is the highest reported today for such a bandwidth. An overall PA bandwidth of 0.9-2.2 GHz (84%) is measured with 10-20-W output power, 10-13-dB gain, and 63%-89% efficiency throughout the band. Furthermore, the Class-E PA is characterized through measurements using constant-envelop global system for mobile communications signals, indicating a favorable adjacent channel power ratio from -40 to -50 dBc within the entire bandwidth.

[1]  J. Lees,et al.  A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA , 2009, IEEE Transactions on Microwave Theory and Techniques.

[2]  P Reynaert Polar Modulation , 2011, IEEE Microwave Magazine.

[3]  K.M.K.H. Leong,et al.  Class-F power amplifier using a multi-frequency composite right/left-handed transmission line harmonic tuner , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[4]  E. M. Jones,et al.  Microwave Filters, Impedance-Matching Networks, and Coupling Structures , 1980 .

[5]  Zoya Popovic,et al.  Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array , 1998 .

[6]  Franco Giannini,et al.  High-efficiency ultra-wideband power amplifier in GaN technology , 2008 .

[7]  K. Entesari,et al.  CMOS Distributed Amplifiers With Extended Flat Bandwidth and Improved Input Matching Using Gate Line With Coupled Inductors , 2009, IEEE Transactions on Microwave Theory and Techniques.

[8]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[9]  H. Zirath,et al.  An 1 GHz class E LDMOS power amplifier , 2003, 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).

[10]  Yong-Sub Lee,et al.  A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications , 2007, IEEE Microwave and Wireless Components Letters.

[11]  G. Matthaei Tables of Chebyshev impedance–transforming networks of low-pass filter form , 1964 .

[12]  Sung Min Park,et al.  Parasitic Capacitance Optimization of GaAs HBT Class E Power Amplifier for High Efficiency CDMA EER Transmitter , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[13]  P. Colantonio,et al.  Optimization of Class E Power Amplifier Design above Theoretical Maximum Frequency , 2008, 2008 European Microwave Integrated Circuit Conference.

[14]  Chul Soon Park,et al.  Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter , 2010, IEEE Microwave and Wireless Components Letters.

[15]  M. P. van der Heijden,et al.  A compact 12-watt high-efficiency 2.1-2.7 GHz class-E GaN HEMT power amplifier for base stations , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[16]  Christian Fager,et al.  Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier , 2010, IEEE Transactions on Microwave Theory and Techniques.

[17]  Jr. R. Wyndrum Microwave filters, impedance-matching networks, and coupling structures , 1965 .

[18]  Christian Fager,et al.  An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz , 2009, 2009 European Microwave Conference (EuMC).

[19]  No Sokal,et al.  CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS , 1975 .

[20]  Slim Boumaiza,et al.  Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique , 2010, MTT 2010.

[21]  Georg Boeck,et al.  5W, 0.35–8 GHz linear power amplifier using GaN HEMT , 2009, 2009 European Microwave Conference (EuMC).

[22]  Georg Boeck,et al.  Broadband GaN switch mode class E power amplifier for UHF applications , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[23]  A. J. Wilkinson,et al.  Transmission-line load-network topology for class-E power amplifiers , 2001 .

[24]  D. Y. Wu,et al.  Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[25]  R. Fano Theoretical limitations on the broadband matching of arbitrary impedances , 1950 .

[26]  Dristy Rahul Parveg,et al.  A broadband, efficient, overdriven class-J RF power amplifier for burst mode operation , 2010, The 40th European Microwave Conference.