Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
暂无分享,去创建一个
Andrew M. Carlin | M. González | S. Ringel | R. Dehoff | M. Mills | R. Unocic | T. Grassman | M. Brenner | T J Grassman | M J Mills | S A Ringel | M R Brenner | M Gonzalez | A M Carlin | R R Unocic | R R Dehoff | A. M. Carlin
[1] E. Fitzgerald,et al. Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures , 1995 .
[2] H. Yonezu,et al. Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates , 1998 .
[3] P. Komninou,et al. Misfit dislocations and antiphase domain boundaries in GaAs/Si interface , 1994 .
[4] S. A. Ringel,et al. Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
[5] L. Lazzarini,et al. Structural properties of GaAs/Ge heterostructures as a function of growth conditions , 1994 .
[6] M. Wanlass,et al. Development of high-efficiency GaAsP solar cells on compositionally graded buffer layers , 1987 .
[7] A. Norman,et al. Lattice-mismatched GaAsP Solar Cells Grown on Silicon by OMVPE , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
[8] A. Khan,et al. Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates , 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..
[9] E. Fitzgerald,et al. Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates , 2010 .
[10] Mantu K. Hudait,et al. High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers , 2000, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
[11] Microstructural study of GaAs epitaxial layers on Ge(100) substrates , 1995 .
[12] Steven A. Ringel,et al. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy , 2009 .
[13] E. Fitzgerald,et al. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage , 2006, IEEE Electron Device Letters.
[14] E. Kvam. Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy , 1994 .
[15] K. Hayashi,et al. MOCVD growth of GaAsP on Si for tandem solar cell application , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
[16] Steven A. Ringel,et al. Strain relaxation properties of InAsyP1−y metamorphic materials grown on InP substrates , 2009 .
[17] Daniel J. Friedman,et al. III-N-V semiconductors for solar photovoltaic applications , 2002 .
[18] Herbert Kroemer,et al. Polar-on-nonpolar epitaxy , 1987 .
[19] Steven A. Ringel,et al. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion , 1998 .
[20] M. Lee,et al. Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates , 2005 .
[21] T. Zdanowicz,et al. Theoretical analysis of the optimum energy band gap of semiconductors for fabrication of solar cells for applications in higher latitudes locations , 2005 .
[22] R. W. Hoffman,et al. Hydrogen passivation of dislocations in InP on GaAs heterostructures , 1994 .
[23] D. Law,et al. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells , 2007 .
[24] M. Yamaguchi,et al. GaAs heteroepitaxial growth on Si for solar cells , 1988 .