Unusual Growth of InP Nanowires Grown on Silicon Surfaces

Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on

[1]  Dieter Bimberg,et al.  InP on Si(111): Accommodation of lattice mismatch and structural properties , 1994 .

[2]  Liping Guo,et al.  Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates , 2006 .

[3]  Lars Samuelson,et al.  One-dimensional steeplechase for electrons realized , 2002 .

[4]  Lars Samuelson,et al.  Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events , 2004, Nature materials.

[5]  Yoshio Watanabe,et al.  Site-controlled InP nanowires grown on patterned Si substrates , 2004 .

[6]  Charles M. Lieber,et al.  Growth of nanowire superlattice structures for nanoscale photonics and electronics , 2002, Nature.

[7]  Masataka Shirai,et al.  Growth mechanism of planar-type GaAs nanowhiskers , 1997 .

[8]  Takashi Fukui,et al.  Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy , 2005 .

[9]  M.S. Islam,et al.  InP nanobridges epitaxially formed between two vertical Si surfaces , 2005, 5th IEEE Conference on Nanotechnology, 2005..

[10]  S. Sharma,et al.  A novel interconnection technique for manufacturing nanowire devices , 2005 .

[11]  Yoshio Itoh,et al.  GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process , 1993 .

[12]  Lars Samuelson,et al.  Defect-free InP nanowires grown in [001] direction on InP (001) , 2004 .

[13]  R. Stanley Williams,et al.  Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces , 2004 .

[14]  Elif Ertekin,et al.  Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures , 2002 .