We would like to report on the performance of buried heterostructure (BH) GaAs/Ga0.65Al0.35As surface emitting (SE) lasers with p-type Ga0.9Al0.1As/Ga0.4Al0.6As and SiO2/TiO2 multilayer Bragg reflectors (MBR) under room temperature CW conditins. The buried heterostructure was formed by a selective LPE growth technique with a Ga0.55Al0.45As mask instead of the conventional SiO2 mask. The GaAlAs mask was very useful for forming uniformly small active regions of about 5 µm in diameter. Under room temperature CW conditions, the threshold current was 5.2 mA. The external differential quantum efficiency was about 16% and more than 0.6 mW of output power was obtained. The lasing wavelength was about 897 nm.