Strain relaxation in epitaxial Si1-xGex/Si(100) layers induced by reaction with palladium
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[1] P. Goodhew,et al. Metal‐induced dislocation nucleation for metastable SiGe/Si , 1991 .
[2] M. Eizenberg,et al. Interaction of Pd with Strained Layers of Si1-xGex Epitaxially Grown on Si(100) , 1991 .
[3] D. Paine,et al. The growth of strained Si_1−xGe_x alloys on 〈001〉 silicon using solid phase epitaxy , 1990 .
[4] Bruce M. Clemens,et al. Strain relaxation kinetics in Si1–xGex/Si heterostructures , 1989 .
[5] Eugene A. Fitzgerald,et al. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area , 1989 .
[6] C. Gibbings,et al. Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon , 1989 .
[7] B. Dodson. Nature of misfit dislocation sources in strained-layer semiconductor structures , 1988 .
[8] John C. Bean,et al. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) , 1984 .
[9] John C. Bean,et al. Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy , 1984 .
[10] J. W. Matthews,et al. Use of misfit strain to remove dislocations from epitaxial thin films , 1976 .