论文信息 - A comparative study on the noise measure of millimetre-wave GaAs impatt diodes

A comparative study on the noise measure of millimetre-wave GaAs impatt diodes

Abstract It is theoretically and experimentally demonstrated that the small-signal noise measure of Gaas single-drift Impatt-diodes can efficiently be reduced by increasing the total width of the diode space-charge region due to shot-noise reduction and space-charge smoothing. For a total space-charge region width of 770 nm, a minimum noise-measure of 22 dB at 60 GHz is obtained. This value reaches almost the theoretical optimum noise measure of pin-avalanche diodes.

[1] M. Claassen,et al. Determination of tunnel-generation rate from GaAs pin-structures , 1991 .

[2] Hermann A. Haus,et al. Optimum Noise Measure of IMPATT Diodes , 1971 .

[3] K. Kurokawa,et al. Noise in Synchronized Oscillators , 1968 .

[4] J. L. Blue,et al. A small-signal theory of avalanche noise in IMPATT diodes , 1967 .

[5] G. Stillman,et al. The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements , 1985, IEEE Transactions on Electron Devices.

[6] R. Kuvås. Small-signal noise measure of avalanche diodes , 1973 .