论文信息 - GaAs/AlAs layered films

GaAs/AlAs layered films

Abstract The use of molecular beam epitaxy to form ordered layered crystals of GaAs and AlAs by alternate-monolayer epitaxial deposition is reviewed. The structures were examined by electron and X-ray diffraction. The relation of the optical properties to the structure is reviewed and new phonon modes associated with the structure are described. The results of alternate-monolayer deposition of other semiconductors are reported.

A. C. Gossard | A. Gossard

[1] R. Dingle,et al. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure , 1975 .

[2] P. Lin-Chung,et al. Pseudopotential calculations for (GaAs) 1 -(AlAs) 1 and related monolayer heterostructures , 1978 .

[3] P. Petroff. Transmission electron microscopy of interfaces in III–V compound semiconductors , 1977 .

[4] J. M. Sanchez,et al. Ternary diffusion in multilayer Ag-Au-Cu thin films , 1975 .

[5] J. E. Hilliard,et al. Effect of Gradient Energy on Diffusion in Gold‐Silver Alloys , 1969 .

[6] J. P. van der Ziel,et al. Absorption, refractive index, and birefringence of AlAs‐GaAs monolayers , 1977 .

[7] R. Dingle,et al. Epitaxial structures with alternate‐atomic‐layer composition modulation , 1976 .

[8] J. Merz,et al. Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs , 1977 .

[9] L. Esaki,et al. Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy , 1976 .

[10] L. L. Chang,et al. Interdiffusion between GaAs and AlAs , 1976 .

[11] J. R. Arthur,et al. Molecular beam epitaxy , 1975 .

[12] Arthur C. Gossard,et al. Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxy: I. Growth on singular (100)GaAs substrates , 1978 .

[13] J. L. Merz,et al. Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs , 1978 .