Peaks in temperature distribution over the area of operating power semiconductor junctions related to the surface leakage current
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[1] V.V.N. Obreja,et al. An experimental investigation on the nature of reverse current of silicon power pn-junctions , 2002 .
[2] Octavian Buiu,et al. Electrical characteristics of present-day manufactured power semiconductor pn junctions and the I-V characteristic theory , 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).
[3] Vasile V.N. Obreja. On the leakage current of present-day manufactured semiconductor junctions , 2000 .
[4] Marioara Avram,et al. Non-uniform junction temperature distribution in high voltage silicon diodes operating above 150 °C , 2004 .
[5] V.V.N. Obreja,et al. The operation temperature of silicon power thyristors and the blocking leakage current , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).
[6] V.V.N. Obreja,et al. I-V reverse characteristic instability of high voltage silicon PN junctions at high temperature , 2004, 2004 International Semiconductor Conference. CAS 2004 Proceedings (IEEE Cat. No.04TH8748).
[7] S. Krishnan,et al. Edge passivation and related electrical stability in silicon power devices , 1990 .