A Surface-Potential-Based Compact Model of AlGaN/GaN HEMTs Power Transistors

A physics based compact model for III-nitride HEMTs developed for SPICE circuit simulation of power transistors is presented. The HSP model (acronym for HEMT SurfacePotential model) follows a physical approach for power devices modeling, as it was done for advanced MOSFETs, leading to the development of compact models such as PSP, HiSIM and EKV3. This model includes: dependency on the aluminum content of energy bandgap and polarization, temperature dependency of several parameters and selfheating. Other effects, which are important when the HEMT transistor works at high voltage, high current and high temperature are also modeled.

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