InP based material for long wavelength optoelectronics grown in a 24/spl times/2" (8/spl times/4") multiwafer Planetary Reactor/spl reg/ for mass production

In order to increase the throughput in the production of long wavelength optoelectronics devices there is a growing demand for InP based materials to be grown in multiwafer reactors. In this paper we will present reactor simulations and results of the growth of InP based material in a Planetary Reactor/spl reg/. The reactor that has been used was an AIX 2600G3 system in the 8/spl times/4" (24/spl times/2") configuration. Based on modeling results we achieved an excellent temperature distribution in the reaction chamber resulting in very good thickness and doping uniformity confirmed by XRD diffraction and Hall-effect measurements on the wafers meeting the specifications of the optoelectronics industry.