Revival of "dead" memristive devices: case of WO3-x.

Inappropriate operation could make a memristive device "dead" and cause the loss of resistive switching performance. In this study, the revival of "dead" devices was investigated in the case of WO3-x-based memristive devices. It is believed that inappropriate operation with a high-voltage pulse creates an ordered structure of oxygen vacancies and such an ordered structure makes the normal reset process fail. By precisely controlled voltage sweeping at certain compliance currents, a "dead" device can be revived. The revival operation disrupts the ordered structure by Joule heating and recovers Schottky-like barrier modulation-based switching.

[1]  Rainer Waser,et al.  Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode , 2008 .

[2]  G. I. Meijer,et al.  Who Wins the Nonvolatile Memory Race? , 2008, Science.

[3]  Cheol Seong Hwang,et al.  Electronic bipolar resistance switching in an anti-serially connected Pt/TiO2/Pt structure for improved reliability , 2012, Nanotechnology.

[4]  Gregory S. Snider,et al.  ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.

[5]  Jun Yeong Seok,et al.  Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt , 2013, Nanotechnology.

[6]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[7]  T. Hasegawa,et al.  Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers , 2012, Advanced materials.

[8]  Xin Guo,et al.  One-dimensional memristive device based on MoO3 nanobelt , 2015 .

[9]  Rainer Waser,et al.  Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells. , 2009, Physical chemistry chemical physics : PCCP.

[10]  H. Pagnia,et al.  Bistable switching in electroformed metal–insulator–metal devices† , 1988 .

[11]  Masakazu Aono,et al.  Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation , 2013, Nanotechnology.

[12]  Qing Wan,et al.  Artificial synapse network on inorganic proton conductor for neuromorphic systems. , 2014, Nature communications.

[13]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[14]  Yi Xie,et al.  Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device. , 2015, Journal of the American Chemical Society.

[15]  Xue-Bing Yin,et al.  Synaptic Metaplasticity Realized in Oxide Memristive Devices , 2016, Advanced materials.

[16]  X. D. Gao,et al.  Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3 interface , 2009 .

[17]  Shimeng Yu,et al.  A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation , 2013, Advanced materials.

[18]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[19]  Byung Joon Choi,et al.  A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure , 2011, Nanotechnology.

[20]  U. Böttger,et al.  Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations , 2012, Nanotechnology.

[21]  C. Yoshida,et al.  High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application , 2007 .

[22]  Wei Lu,et al.  Short-term Memory to Long-term Memory Transition in a Nanoscale Memristor , 2022 .

[23]  Masakazu Aono,et al.  Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices , 2012 .

[24]  K. Terabe,et al.  Quantized conductance atomic switch , 2005, Nature.

[25]  Masakazu Aono,et al.  On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration. , 2012, ACS nano.

[26]  Qi Liu,et al.  Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory , 2015, Scientific Reports.

[27]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[28]  Weifeng Zhang,et al.  Conversion of two types of bipolar switching induced by the electroforming polarity in Au/NiO/SrTiO3/Pt memory cells , 2014 .

[29]  Rui Yang,et al.  Polarity reversal in the bipolar switching of anodic TiO2 film , 2015 .

[30]  Warren Robinett,et al.  Memristor-CMOS hybrid integrated circuits for reconfigurable logic. , 2009, Nano letters.

[31]  Manfred Martin,et al.  Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour , 2014, Nature Communications.

[32]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[33]  Shimeng Yu,et al.  Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems. , 2014, ACS nano.

[34]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[35]  T. Mikolajick,et al.  Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics , 2014 .

[36]  Xue-Bing Yin,et al.  The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence. , 2015, Physical chemistry chemical physics : PCCP.

[37]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[38]  Y. S. Chen,et al.  Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices , 2014, Scientific Reports.

[39]  T. W. Hickmott LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .

[40]  J. Bruyère,et al.  SWITCHING AND NEGATIVE RESISTANCE IN THIN FILMS OF NICKEL OXIDE , 1970 .

[41]  S. S. Kim,et al.  Change of conduction mechanism by microstructural variation in Pt/(Ba,Sr)TiO3/Pt film capacitors , 2002 .

[42]  R. Waser,et al.  Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices. , 2015, Nanoscale.

[43]  Qiangfei Xia,et al.  Impact of geometry on the performance of memristive nanodevices. , 2011, Nanotechnology.

[44]  Huaqiang Wu,et al.  Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory. , 2015, Physical chemistry chemical physics : PCCP.

[45]  R. Dittmann,et al.  Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO3 Thin‐Film Memristive Devices , 2010, Advanced materials.

[46]  D. Alamarguy,et al.  Memristive and neuromorphic behavior in a LixCoO2 nanobattery , 2015, Scientific Reports.

[47]  Markus Kubicek,et al.  Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO3‐δ Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance , 2014 .

[48]  Tomoji Kawai,et al.  Intrinsic mechanisms of memristive switching. , 2011, Nano letters.

[49]  Markus Kubicek,et al.  Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits. , 2015, ACS nano.

[50]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[51]  Cheol Seong Hwang,et al.  Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell , 2012, Nanotechnology.

[52]  Tae Hyung Park,et al.  Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides. , 2014, Nanoscale.

[53]  R. Waser,et al.  Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere , 2008 .