Longitudinal mode spectrum of semiconductor lasers under high-speed modulation

Experimental observations of the lasing spectrum of a single-mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single-longitudinal mode for optical modulation depths up to ∼ 80 percent, beyond which the lasing spectrum breaks into multimode oscillation. The width of the envelope of the multimode spectrum increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which gives simple analytic results for the time evolution of the individual longitudinal modes. It also yields considerable insight into spectral dynamics, and enables one to predict the dynamic lasing spectrum of a laser from its CW lasing spectra at various output powers. The results can also be used to predict the amount of spectral envelope broadening under single or pseudo-random pulse modulation.

[1]  Kenju Otsuka,et al.  Dynamic behaviour of a GaAs-AlGaAs MQW laser diode , 1983 .

[2]  R. J. Nelson,et al.  Short-cavity single-frequency InGaAsP buried-heterostructure lasers , 1983 .

[3]  Kerry J. Vahala,et al.  Observation of relaxation resonance effects in the field spectrum of semiconductor lasers , 1983 .

[4]  Larry A. Coldren,et al.  Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers , 1983 .

[5]  C. A. Burrus,et al.  Observation of transient spectra and mode partition noise of injection lasers , 1982 .

[6]  C. Burrus,et al.  High-efficiency short-cavity InGaAsP laser with one high-reflectivity mirror , 1982 .

[7]  K. Kishino,et al.  Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation , 1982, IEEE Journal of Quantum Electronics.

[8]  Donald R. Scifres,et al.  Longitudinal Mode Spectra of Diode Lasers , 1982, Topical Meeting on Integrated and Guided-Wave Optics.

[9]  Y. Suematsu,et al.  Lasing characteristics of 1.5 - 1.6 µm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors , 1981, IEEE Journal of Quantum Electronics.

[10]  Minoru Yamada,et al.  Analysis of gain suppression in undoped injection lasers , 1981 .

[11]  Katsuyuki Utaka,et al.  Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors , 1980 .

[12]  J. Carroll,et al.  Analysis of the effect of spontaneous-emission coupling on the number of excited longitudinal modes in semiconductor lasers , 1978 .

[13]  M. Matthews,et al.  Spectral and transient response of low-threshold proton-isolated (GaAl)as lasers , 1978 .

[14]  Naoki Chinone,et al.  Longitudinal‐mode behaviors of mode‐stabilized AlxGa1−xAs injection lasers , 1978 .

[15]  K. Petermann,et al.  Theoretical analysis of spectral modulation behaviour of semiconductor injection lasers , 1978 .

[16]  J. Buus,et al.  Carrier diffusion and higher order transversal modes in spectral dynamics of the semiconductor laser , 1977 .

[17]  F. Mengel,et al.  Dynamics of longitudinal and transverse modes along the junction plane in GaAlAs stripe lasers , 1977 .

[18]  A. R. Goodwin,et al.  Effect of d.c. bias level on the spectrum of GaAs lasers operated with short pulses , 1976 .

[19]  H. Statz,et al.  Spectral Output and Spiking Behavior of Solid‐State Lasers , 1963 .