Computer aided design tools for power IC's

The authors give an overview of the status of CAD (computer-aided design) tools in power IC design, especially the use of simulation tools and computer-aided layout techniques. They illustrate the possibilities of these tools with two examples from a recent MOS controlled thyristor (MCT) design effort.<<ETX>>

[1]  D. Metzner,et al.  A SITH-model for CAE in power-electronics , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

[2]  Wolfgang Fichtner,et al.  Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results , 1991 .

[3]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[4]  N. J. Elias,et al.  A Case Study in Silicon Compilation Software Engineering, HVDEV High Voltage Device Layout Generator , 1987, 24th ACM/IEEE Design Automation Conference.

[5]  A.R. Hefner,et al.  Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) , 1988, Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.

[6]  Gernot Heiser,et al.  Three-dimensional simulation of complex semiconductor device structures , 1989, International Symposium on VLSI Technology, Systems and Applications,.

[7]  Wolfgang Fichtner,et al.  Multi-dimensional simulation of MCT structures , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

[8]  D. Schroder,et al.  A power bipolar junction transistor model describing the static and the dynamic behavior , 1989 .

[9]  S. Selberherr,et al.  Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation , 1983, IEEE Transactions on Electron Devices.