Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?
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[1] A. K. Sinha,et al. Kinetics of the Slow‐Trapping Instability at the Si / SiO2 Interface , 1978 .
[2] K. Jeppson,et al. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices , 1977 .
[3] S. R. Hofstein. Stabilization of MOS devices , 1967 .
[4] J. Harbison,et al. Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques , 1986 .
[5] C. van Berkel,et al. Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors , 1987 .
[6] Marshall,et al. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon. , 1989, Physical review. B, Condensed matter.
[7] J. Kanicki,et al. Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface , 1989 .
[8] Winer,et al. Distribution of occupied near-surface band-gap states in a-Si:H. , 1988, Physical review. B, Condensed matter.
[9] J. Kanicki,et al. Direct observation of the silicon nitride on amorphous silicon interface states , 1990 .