Noise as a diagnostic tool for quality and reliability of electronic devices

Experimental facts about noise are presented which help us to understand the correlation between noise in a device and its reliability. The main advantages of noise measurements are that the tests are less destructive, faster and more sensitive than DC measurements after accelerated life tests. The following topics are addressed: 1) the kind of noise spectra in view of reliability diagnostics such as thermal noise, shot noise, the typical poor-device indicators like burst noise and generation-recombination noise and the 1/f/sup 2/ and 1/f noise; 2) why conduction noise is a quality indicator; 3) the quality of electrical contacts and vias; 4) electromigration damage; 5) the reliability in diode type devices like solar cells, laser diodes, and bipolar transistors; and 6) the series resistance in modern short channel MESFET, MODFET, and MOST devices. >

[1]  E. Vandamme,et al.  1/f noise and its coherence as a diagnostic tool for quality assessment of potentiometers , 1994 .

[2]  Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions , 1992 .

[3]  John H. Scofield,et al.  Physical basis for nondestructive tests of MOS radiation hardness , 1991 .

[4]  D. Rigaud,et al.  1/f noise in MODFETs at low drain bias , 1990 .

[5]  L. Vandamme,et al.  Bulk 1/f-Noise in MOS Transistors at Low Drain-Source Voltages , 1978 .

[6]  L.K.J. Vandamme,et al.  noise in MOSFET as a diagnostic tool , 1992 .

[7]  L. Vandamme,et al.  noise in series resistance of LDD MOSTs , 1992 .

[8]  L.K.J. Vandamme,et al.  1/f noise as a reliability estimation for solar cells , 1983 .

[9]  L.K.J. Vandamme,et al.  Characterization of impulse-fritting procedures of contacts by measuring 1/f noise , 1976 .

[10]  John H. Scofield,et al.  Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors , 1991 .

[11]  J.Y.-C. Sun,et al.  An analytical one-dimensional model for lightly doped drain (LDD) MOSFET devices , 1985, IEEE Transactions on Electron Devices.

[12]  C. C. McAndrew,et al.  MOSFET effective channel length, threshold voltage, and series resistance determination by robust optimization , 1992 .

[13]  T. Kleinpenning,et al.  1/ f noise in p‐n junction diodes , 1985 .

[14]  T.G.M. Kleinpenning.  On 1/f trapping noise in MOSTs , 1990 .

[15]  M. L. Dreyer.  1/f 2 Noise and Electromigration in Al-Cu Interconnects , 1991 .

[16]  Clarke,et al.  Dependence of 1/f noise on defects induced in copper films by electron irradiation. , 1985, Physical review letters.

[17]  George Weiss,et al.  Fluctuation Phenomena in Solids , 1965 .

[18]  E. A. Amerasekera,et al.  Failure Mechanisms in Semiconductor Devices , 1987 .

[19]  T.G.M. Kleinpenning,et al.  Location of low-frequency noise sources in submicrometer bipolar transistors , 1992 .

[20]  L.K.J. Vandamme,et al.  Bulk and surface 1/f noise , 1989 .

[21]  Tso-Ping Ma,et al.  Effect of radiation-induced interface traps on 1/f noise in MOSFET's , 1992 .

[22]  D. Fleetwood,et al.  1/f noise and radiation effects in MOS devices , 1994 .

[23]  Daniel M. Fleetwood,et al.  Effect of radiation-induced charge on 1/f noise in MOS devices , 1990 .

[24]  Charles Surya,et al.  The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs , 1993 .

[25]  Jeng Gong,et al.  1/f noise in the linear region of LDD MOSFETs , 1988 .

[26]  L. Vandamme.  1/f noise of point contacts affected by uniform films , 1974 .

[27]  L.K.J. Vandamme,et al.  Model for 1/f; noise in MOS transistors biased in the linear region , 1980 .

[28]  F. Pascal,et al.  1/ƒ and g-r noise in AlGaAs epitaxial layers , 1994 .

[29]  A. Bhattacharyya,et al.  Mechanism of degradation of LDD MOSFETs due to hot-electron stress , 1988 .

[30]  Guido Groeseneken,et al.  Correlation between 1/f noise and interface state density at the Fermi level in field‐effect transistors , 1985 .

[31]  Zeynep Celik-Butler,et al.  A model for electromigration and low-frequency noise in thin metal films , 1991 .

[32]  F. Hooge,et al.  Lattice scattering causes 1/ƒ noise , 1978 .

[33]  L.K.J. Vandamme,et al.  An explanation of 1/f noise in LDD MOSFETs from the ohmic region to saturation , 1993 .

[34]  T.G.M. Kleinpenning,et al.  On noise and random telegraph noise in very small electronic devices , 1990 .

[35]  Hei Wong,et al.  Study of the electronic trap distribution at the SiO/sub 2/-Si interface utilizing the low-frequency noise measurement , 1990 .

[36]  Daniel M. Fleetwood,et al.  1/f noise in n- and p-channel MOS devices through irradiation and annealing , 1991 .

[37]  Giordano,et al.  Direct link between 1/f noise and defects in metal films. , 1985, Physical review. B, Condensed matter.

[38]  Scofield,et al.  Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. , 1990, Physical review letters.

[39]  D. Fleetwood,et al.  Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors , 1989 .

[40]  S. Wright,et al.  Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures , 1988 .

[41]  M.J.O. Strutt,et al.  Measurement of white and 1/f noise within burst noise , 1974 .

[42]  T.-P. Ma,et al.  1/f noise in hot-carrier damaged MOSFET's: effects of oxide charge and interface traps , 1993, IEEE Electron Device Letters.

[43]  K. Kandiah,et al.  A physical model for random telegraph signal currents in semiconductor devices , 1989 .

[44]  F. M. Klaassen,et al.  Characterization of low 1/f noise in MOS transistors , 1971 .

[45]  G. Declerck,et al.  Measurement of low densities of surface states at the SiSiO2-interface , 1973 .

[46]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[47]  A. Hamada,et al.  Time dependence of p-MOSFET hot-carrier degradation measured and interpreted consistently over ten orders of magnitude , 1993 .

[48]  L. Vandamme.  Comments on "An exact formula for the effects of resistor geometry on current noise" , 1986 .

[49]  B. S. Doyle,et al.  The characterization of hot carrier damage in p-channel transistors , 1993 .

[50]  F. Klaassen,et al.  Compact transistor modelling for circuit design , 1990 .

[51]  E. P. Vandamme,et al.  Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET , 1994 .

[52]  F. Hooge,et al.  Temperature dependence of 1/ƒ noise in epitaxial n-type GaAs , 1992 .

[53]  L.K.J. Vandamme,et al.  1/f; noise model for MOSTs biased in nonohmic region , 1980 .

[54]  L.K.J. Vandamme,et al.  On 1/f noise in ohmic contacts , 1976 .

[55]  E. Simoen,et al.  Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors , 1993 .

[56]  F. Hooge,et al.  Experimental studies of 1/f noise in n-GaAs , 1993 .

[57]  K. Kandiah,et al.  LOW FREQUENCY NOISE IN JUNCTION FIELD EFFECT TRANSISTORS , 1978 .

[58]  V. Palenskis,et al.  Origin of 1ƒ noise , 1982 .

[59]  Peter Händel,et al.  Noise in physical systems and 1/f fluctuations , 1993 .

[60]  Joseph F. Stephany.  Origin of 1/f noise , 1975 .

[61]  B. K. Jones,et al.  Electrical Noise as a Measure of Quality and Reliability in Electronic Devices , 1993 .

[62]  L.K.J. Vandamme,et al.  Correlation between most 1/f noise and CCD transfer inefficiency , 1985 .

[63]  G. Reimbold,et al.  Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states , 1984, IEEE Transactions on Electron Devices.

[64]  M. Leys,et al.  1/f noise at room temperature in n-type GaAs grown by molecular beam epitaxy , 1991 .

[65]  Dietrich Wolf,et al.  Noise in physical systems , 1978 .

[66]  M. Stegherr,et al.  Flicker noise in hot electron degraded short channel MOSFETs , 1984 .

[67]  Charles G. Sodini,et al.  A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon , 1989 .

[68]  M. Valenza,et al.  Low noise ohmic contacts on n and p type GaSb , 1993 .

[69]  B. Dierickx,et al.  Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K , 1993 .

[70]  I. Lundström,et al.  Low frequency noise in MOS transistors—I Theory , 1968 .

[71]  S. Tedja,et al.  Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[72]  M. Boudry.  Theoretical origins of Nss peaks observed in Gray‐Brown MOS studies , 1973 .

[73]  C. G. Sodini,et al.  Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs , 1992 .

[74]  Gwo-Sheng Huang,et al.  An analytic I—V model for lightly doped drain (LDD) MOSFET devices , 1987 .

[75]  Franciszek Grabowski,et al.  A complementarity of the 1f noise and the charge-pumping methods for determination of the degradation of the small size MOS transistors , 1992 .

[76]  L. Vandamme.  Correspondence: Comments on "1/f Noise in Metal Contacts and Granular Resistors" , 1987 .

[77]  L.K.J. Vandamme,et al.  Specific contact resistance and noise in contacts on thin layers , 1982 .

[78]  L.K.J. Vandamme,et al.  On the calculation of 1/f noise of contacts , 1976 .

[79]  L.K.J. Vandamme.  Annealing of Implants Reduces Lattice Defects and 1/f Noise , 1988 .

[80]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[81]  G. Dorda,et al.  Generation of interface states by hot hole injection in MOSFET's , 1982, IEEE Transactions on Electron Devices.

[82]  T. V. Blalock,et al.  Survey, applications, and prospects of Johnson noise thermometry , 1981 .

[83]  M. J. Deen,et al.  A new 1/f noise model for metal‐oxide‐semiconductor field‐effect transistors in saturation and deep saturation , 1992 .

[84]  Ingemar Lundström,et al.  Low frequency noise in MOS transistors—II Experiments , 1968 .

[85]  L. Ren.  Intrinsic and extrinsic 1/f noise sources in proton‐irradiated n‐GaAs epitaxial layers , 1993 .

[86]  L.K.J. Vandamme,et al.  1/f noise measurements for characterizing multispot low‐Ohmic contacts , 1976 .

[87]  S. Cristoloveanu,et al.  Analysis of hot-carrier-induced aging from 1/f noise in short-channel MOSFET's , 1986, IEEE Electron Device Letters.